4 research outputs found

    Imaging non-radiative point defects buried in quantum wells using cathodoluminescence

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    Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual non-radiative PDs buried in such QWs has so far not been demonstrated. Here, using high-resolution cathodoluminescence (CL) and a specific sample design, we spatially resolve, image, and analyse non-radiative PDs in InGaN/GaN QWs. We identify two different types of PD by their contrasting behaviour with temperature, and measure their densities from 101410^{14} cm3^{-3} to as high as 101610^{16} cm3^{-3}. Our CL images clearly illustrate the interplay between PDs and carrier dynamics in the well: increasing PD concentration severely limits carrier diffusion lengths, while a higher carrier density suppresses the non-radiative behaviour of PDs. The results in this study are readily interpreted directly from CL images, and represent a significant advancement in nanoscale PD analysis.Comment: Main text: 8 pages, 6 figures. Supplementary: 11 pages, 8 figure

    Enhanced photoluminescence quantum yield of MAPbBr(3) nanocrystals by passivation using graphene

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    Diminishing surface defect states in perovskite nanocrystals is a highly challenging subject for enhancing optoelectronic device performance. We synthesized organic/inorganic lead-halide perovskite MAPbBr(3) (MA = methylammonium) clusters comprising nanocrystals with diameters ranging between 20-30 nm and characterized an enhanced photoluminescence (PL) quantum yield (as much as ~ 7 times) by encapsulating the MAPbBr(3) with graphene (Gr). The optical properties of MAPbBr(3) and Gr/MAPbBr(3) were investigated by temperature-dependent micro-PL and time-resolved PL measurements. Density functional theory calculations show that the surface defect states in MAPbBr(3) are removed and the optical band gap is reduced by a 0.15 eV by encapsulation with graphene due to partial restoration of lattice distortions

    Resonantly Pumped Bright-Triplet Exciton Lasing in Cesium Lead Bromide Perovskites

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    The surprising recent observation of highly emissive triplet-states in lead halide perovskites accounts for their orders-of-magnitude brighter optical signals and high quantum efficiencies compared to other semiconductors. This makes them attractive for future optoelectronic applications, especially in bright low-threshold nanolasers. While nonresonantly pumped lasing from all-inorganic lead-halide perovskites is now well-established as an attractive pathway to scalable low-power laser sources for nano-optoelectronics, here we showcase a resonant optical pumping scheme on a fast triplet-state in CsPbBr3 nanocrystals. The scheme allows us to realize a polarized triplet-laser source that dramatically enhances the coherent signal by 1 order of magnitude while suppressing noncoherent contributions. The result is a source with highly attractive technological characteristics, including a bright and polarized signal and a high stimulated-to-spontaneous emission signal contrast that can be filtered to enhance spectral purity. The emission is generated by pumping selectively on a weakly confined excitonic state with a Bohr radius similar to 10 nm in the nanocrystals. The exciton fine-structure is revealed by the energy-splitting resulting from confinement in nanocrystals with tetragonal symmetry. We use a linear polarizer to resolve 2-fold nondegenerate sublevels in the triplet exciton and use photoluminescence excitation spectroscopy to determine the energy of the state before pumping it resonantly
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